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Samsung throws flash memory out of its PRAM @ The Inquirer
Posted by Regeneration on September 12th, 2006, 02:24 AM

The acronym for phase-change Random Access Memory is PRAM, and Samsung showed off a 512 megabit device today. This non-volatile PRAM can re-write without erasing existing data and that will make it 30 times faster than flash memory, Samsung claims.

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